Effect of Multistep Wafer-Annealing on Main Traps in Czochralski-Grown Semi-Insulating GaAs
نویسندگان
چکیده
منابع مشابه
Improved thermal stability of AlGaAsyGaAsyAlGaAs single quantum well by growth on Zn-doped GaAs (001)
The effects of Zn doping in the substrate on the thermal stability of GaAsyAl Ga As single quantum well are investigated 0.24 0.76 by 900 8C rapid thermal annealing and low-temperature (12 K) photoluminescence measurements. An improvement in thermal stability is demonstrated for structures grown on Zn-doped GaAs in comparison with those grown on semi-insulating and Sidoped GaAs substrates. It i...
متن کاملELECTRON ACCUMULATION AT THE n-ZnSe/n-GaAs INTERFACE
Evidence for electron accumulation in the ZnSe side of n-ZnSe/n-GaAs heterostructures is presented. An n-GaAs buffer layer, approximately 1 pm thick, grown with low 1015 electronic concentration on a semi-insulating (100) GaAs substrate is fully depleted of electrons when an additional epilayer of nZnSe is grown on top of it. The n-GaAs epilayer electron concentration is restored when the ZnSe ...
متن کاملPhotoreflectance Study of Electric Field Distributions in Semiconductors Heterostructures Grown on Semi-Insulating Substrates
We have studied the photoreflectance (PR) spectra from a MBE grown heterostructure consisting of 200 nm of Gao.s3A10.~7As, a 800 nm GaAs buffer layer on a semi-insulating (100) LEC GaAs substrate. By varying both the pump beam wavelength and modulation frequency (up to 100 kHz) we are able to identify the component layers, their quality and the properties of the various interfaces. In this stud...
متن کاملGrowth of silver nanowires on GaAs wafers.
Silver (Ag) nanowires with chemically clean surfaces have been directly grown on semi-insulating gallium arsenide (GaAs) wafers through a simple solution/solid interfacial reaction (SSIR) between the GaAs wafers themselves and aqueous solutions of silver nitrate (AgNO(3)) at room temperature. The success in synthesis of Ag nanowires mainly benefits from the low concentration of surface electron...
متن کاملElectric field distributions in a molecular-beam epitaxy GaO•83 Alo.17 As/ GaAs/ GaAs structure using photoreflectance
We have studied the photorefiectance (PR) spectra from a molecular-beam epitaxially (MBE) grown heterostructure consisting of 200 nm of G!lo83 Alo 17 As, a 800-nm GaAs buffer layer on a semi-insulating (81) (100) (LEC) GaAs substrate. By varying both the pump beam wavelength and modulation frequency we are able to identify the component layers, their quality, and the quality of the various inte...
متن کامل